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Doping graphene with UV light

  • CVD Graphene was synthesized at PENN.
  • A Field Effect Transistor was fabricated at UPRH .
  • No lithography was used (i.e. no harsh chemicals used) to define the source and drain electrodes, instead a TEM grid was used as a shadow mask. This is new to graphene based device fabrication.
  • The device was tested in vacuum under UV irradiation
  • We found that it was possible to dope graphene with no change in the charge mobility (see top figure).
  • The process was reversible.








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