Skip to content Skip to navigation

Ultraviolet Tunable MoS2/p-Silicon Junction Diode

Author(s) with affiliations: 

Nicholas Pinto (UPR-Humacao) and A.T. Charlie Johnson Jr. (PENN)

MoS2 single crystals were transferred onto the edge of a p-Si/SiO2 wafer, forming an abrupt heterogeneous junction diode at the MoS2/p-Si interface. When electrically characterized as a field effect transistor, MoS2 exhibits an n-type response and can be doped in the presence of ultraviolet (UV) light. Its simple design coupled with the ability to rectify AC signals, sense UV light, and reversibly tune these diodes makes them inexpensive, multifunctional, and usable as active or passive components in complex electronics.